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d a t a sh eet product speci?cation file under discrete semiconductors, sc13b april 1995 discrete semiconductors bst120 p-channel enhancement mode vertical d-mos transistor
april 1995 2 philips semiconductors product speci?cation p-channel enhancement mode vertical d-mos transistor bst120 description p-channel vertical d-mos transistor in sot89 envelope and intended for use in relay, high-speed and line-transformer drivers, using smd technology. features very low r ds(on) direct interface to c-mos high-speed switching no second breakdown quick reference data pinning - sot89 drain-source voltage - v ds max. 60 v gate-source voltage (open drain) v gso max. 20 v drain current (dc) - i d max. 0,3 a total power dissipation up to t amb =25 cp tot max. 1 w drain-source on-resistance typ. max. 4,5 6 w w - i d = 200 ma; - v gs = 10 v r ds(on) transfer admittance - i d = 200 ma; - v ds = 15 v y fs typ. 200 ms 1 = source 2 = drain 3 = gate pin configuration fig.1 simplified outline and symbol. marking: lm handbook, halfpage 123 mam354 bottom view s d g
april 1995 3 philips semiconductors product speci?cation p-channel enhancement mode vertical d-mos transistor bst120 ratings limiting values in accordance with the absolute maximum system (iec 134) thermal resistance note 1. transistor mounted on ceramic substrate: area = 2,5 cm 2 and thickness = 0,7 mm. drain-source voltage - v ds max. 60 v gate-source voltage (open drain) v gso max. 20 v drain current (dc) - i d max. 0.3 a drain current (peak) - i dm max. 0.8 a total power dissipation up to t amb = 25 c (note 1) p tot max. 1 w storage temperature range t stg - 65 to + 150 c junction temperature t j max. 150 c from junction to ambient (note 1) r th j-a = 125 k/w
april 1995 4 philips semiconductors product speci?cation p-channel enhancement mode vertical d-mos transistor bst120 characteristics t j =25 c unless otherwise speci?ed drain-source breakdown voltage - i d =10 m a; v gs =0 - v (br)dss min. 60 v drain-source leakage current - v ds = 48 v; v gs =0 - i dss max. 1 m a gate-source leakage current - v gs = 20 v; v ds =0 - i gss max. 100 na gate threshold voltage min. max. 1.5 3.5 v v - i d = 1 ma; v ds =v gs - v gs(th) drain-source on-resistance typ. max. 4.5 6 w w - i d = 200 ma; - v gs = 10 v r ds(on) transfer admittance - i d = 200 ma; - v ds = 15 v y fs typ. 200 ms input capacitance at f = 1 mhz typ. max. 55 70 pf pf - v ds = 10 v; v gs =0 c iss output capacitance at f = 1 mhz typ. max. 30 45 pf pf - v ds = 10 v; v gs =0 c oss feedback capacitance at f = 1 mhz typ. max. 8 12 pf pf - v ds = 10 v; v gs = 0 c rss switching times (see figs 2 and 3) t on t off typ. typ. 4 20 ns ns - i d = 200 ma; - v dd = 50 v; - v gs = 0 to 10 v
april 1995 5 philips semiconductors product speci?cation p-channel enhancement mode vertical d-mos transistor bst120 fig.2 switching times test circuit. handbook, halfpage mbb689 50 w v dd = - 50 v i d 0 v - 10 v fig.3 input and output waveforms. handbook, halfpage mbb690 10 % 90 % 90 % 10 % t on t off output input fig.4 drain current vs on-resistance; t j =25 c; typical values. handbook, halfpage 16 4 8 6 i d (ma) r dson ( w ) 10 12 14 - 10 3 - 10 2 - 10 mda776 v gs = - 10 v - 7.5 v - 6 v - 5 v - 4.5 v fig.5 transfer characteristics; t j =25 c; - v ds = 10 v; typical values. handbook, halfpage 0 - 10 - 1 0 - 0.2 - 0.4 - 0.6 - 0.8 - 2 - 4 - 6 i d (a) - 8 mda777 v gs (v)
april 1995 6 philips semiconductors product speci?cation p-channel enhancement mode vertical d-mos transistor bst120 fig.6 output characteristics; t j =25 c; typical values. handbook, halfpage 0 - 10 - 1 0 - 0.2 - 0.4 - 0.6 - 0.8 - 2 - 4 - 6 i d (a) - 8 mda778 v ds (v) v gs = - 10 v - 7.5 v - 6 v - 5 v - 4.5 v
april 1995 7 philips semiconductors product speci?cation p-channel enhancement mode vertical d-mos transistor bst120 package outlines references outline version european projection issue date iec jedec eiaj dimensions (mm are the original dimensions) sot89 97-02-28 w m e 1 e e h e b 0 2 4 mm scale b 3 b 2 b 1 c d l a plastic surface mounted package; collector pad for good heat transfer; 3 leads sot89 123 unit a mm 1.6 1.4 0.48 0.35 c 0.44 0.37 d 4.6 4.4 e 2.6 2.4 h e 4.25 3.75 e 3.0 w 0.13 e 1 1.5 l min. 0.8 b 2 b 1 0.53 0.40 b 3 1.8 1.4
april 1995 8 philips semiconductors product speci?cation p-channel enhancement mode vertical d-mos transistor bst120 definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. application information where application information is given, it is advisory and does not form part of the speci?cation.
april 1995 9 philips semiconductors product speci?cation p-channel enhancement mode vertical d-mos transistor bst120 notes
april 1995 10 philips semiconductors product speci?cation p-channel enhancement mode vertical d-mos transistor bst120 notes
april 1995 11 philips semiconductors product speci?cation p-channel enhancement mode vertical d-mos transistor bst120 notes
internet: http://www.semiconductors.philips.com philips semiconductors C a worldwide company ? philips electronics n.v. 1997 sca54 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owne r. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reli able and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not con vey nor imply any license under patent- or other industrial or intellectual property rights. netherlands: postbus 90050, 5600 pb eindhoven, bldg. vb, tel. +31 40 27 82785, fax. +31 40 27 88399 new zealand: 2 wagener place, c.p.o. box 1041, auckland, tel. +64 9 849 4160, fax. +64 9 849 7811 norway: box 1, manglerud 0612, oslo, tel. +47 22 74 8000, fax. +47 22 74 8341 philippines: philips semiconductors philippines inc., 106 valero st. salcedo village, p.o. box 2108 mcc, makati, metro manila, tel. +63 2 816 6380, fax. +63 2 817 3474 poland: ul. lukiska 10, pl 04-123 warszawa, tel. +48 22 612 2831, fax. +48 22 612 2327 portugal: see spain romania: see italy russia: philips russia, ul. usatcheva 35a, 119048 moscow, tel. +7 095 755 6918, fax. +7 095 755 6919 singapore: lorong 1, toa payoh, singapore 1231, tel. +65 350 2538, fax. +65 251 6500 slovakia: see austria slovenia: see italy south africa: s.a. philips pty ltd., 195-215 main road martindale, 2092 johannesburg, p.o. box 7430 johannesburg 2000, tel. +27 11 470 5911, fax. +27 11 470 5494 south america: rua do rocio 220, 5th floor, suite 51, 04552-903 s?o paulo, s?o paulo - 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